AlGaN/GaN HEMTs on (111) silicon substrates

Material and device issues of AlGaN/GaN HEMTs on silicon substrates

Selected material and device issues related to the performance of AlGaN/GaN HEMTs on (111) Si substrates are reported. It is shown that these devices can sustain significantly higher dc power (16 W/mm) than those grown on sapphire. Consequently smaller degradation in the device performance at higher temperatures (up to 400 8C) is demonstrated. Photoionisation spectroscopy reveals trap level of ...

AlGaN/GaN HEMTs on Silicon Carbide Substrates for Microwave Power Operation

Results from technology and microwave characterization of large periphery AlGaN/GaN power HEMTs on insulating SiC substrates are presented. The influence of processing steps on device performance is discussed. DC characteristics reveal current densities above 1.2 A/mm and extrinsic transconductances of 275 mS/mm. A power density of 5.2 W/mm @ 2 GHz is obtained for devices up to 2 mm gate width....

Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE

The large signal characteristics of 1 m long -gate AlGaN/GaN HEMTs on resistive silicon substrates have been measured and analyzed. The HEMTs demonstrated maximum transconductance and current density values of 350 mS/mm and 1,200 mA/mm respectively. High current gain and maximum power gain frequencies ft and fmax were measured at 25 GHz and 43 GHz. Large signal gain and power density values of ...

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

A comparative assessment of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on silicon and sapphire substrates has been carried out. Large-area power GaN HEMTs with identical device dimensions were fabricated on both substrates. A thicker AlN buffer layer was used for the GaN HEMT on silicon to achieve similar quality and uniformity of GaN epitaxy for ration...